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Title: | Diffuse reflectance properties and bandgap analysis of Mg2SiO4:RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device application |
Authors: | Naik, R. Prashantha, S. C. Nagabhushana, H. Nagaswarupa, H. P. Jnaneshwara, D. M. Devaraja, P. B. Darshan, G. P. |
Keywords: | Bandgap analysis Light emitting device Nanophosphors |
Issue Date: | 2017 |
Publisher: | AIP Publishing |
Citation: | Naik, R., Prashantha, S. C., Nagabhushana, H., Nagaswarupa, H. P., Jnaneshwara, D. M., Devaraja, P. B., & Darshan, G. P. (2017, May). Diffuse reflectance properties and bandgap analysis of Mg2SiO4: RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device application. In AIP Conference Proceedings (Vol. 1832, No. 1, p. 050035). AIP Publishing |
Abstract: | RE3+(RE= Eu, Tb, Sm, Dy) doped Mg2SiO4 nanophosphors were analysed under Diffuse Reflectance Spectral (DRS) studies. The variations of absorption peaks for all different dopants at different wavelengths have been discussed. The effect of concentration on absorption edges also been discussed. Further the bandgap analysis of RE3+ doped Mg2SiO4 nanophosphors were carried out using Kubelka-Munk (K-M) function. The absorption wavelengths obtained for different samples are used as excitation wavelength to get emission of light in different region so that the phosphors are used for light emitting device applications. |
URI: | http://13.232.72.61:8080/jspui/handle/123456789/2057 |
Appears in Collections: | Faculty of Science |
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Diffuse reflectance properties and bandgap analysis of Mg2SiO4.pdf | 11.77 kB | Adobe PDF | View/Open |
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