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Please use this identifier to cite or link to this item: http://13.232.72.61:8080/jspui/handle/123456789/2057
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dc.contributor.authorNaik, R.-
dc.contributor.authorPrashantha, S. C.-
dc.contributor.authorNagabhushana, H.-
dc.contributor.authorNagaswarupa, H. P.-
dc.contributor.authorJnaneshwara, D. M.-
dc.contributor.authorDevaraja, P. B.-
dc.contributor.authorDarshan, G. P.-
dc.date.accessioned2019-04-13T05:44:22Z-
dc.date.available2019-04-13T05:44:22Z-
dc.date.issued2017-
dc.identifier.citationNaik, R., Prashantha, S. C., Nagabhushana, H., Nagaswarupa, H. P., Jnaneshwara, D. M., Devaraja, P. B., & Darshan, G. P. (2017, May). Diffuse reflectance properties and bandgap analysis of Mg2SiO4: RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device application. In AIP Conference Proceedings (Vol. 1832, No. 1, p. 050035). AIP Publishingen_US
dc.identifier.urihttp://13.232.72.61:8080/jspui/handle/123456789/2057-
dc.description.abstractRE3+(RE= Eu, Tb, Sm, Dy) doped Mg2SiO4 nanophosphors were analysed under Diffuse Reflectance Spectral (DRS) studies. The variations of absorption peaks for all different dopants at different wavelengths have been discussed. The effect of concentration on absorption edges also been discussed. Further the bandgap analysis of RE3+ doped Mg2SiO4 nanophosphors were carried out using Kubelka-Munk (K-M) function. The absorption wavelengths obtained for different samples are used as excitation wavelength to get emission of light in different region so that the phosphors are used for light emitting device applications.en_US
dc.publisherAIP Publishingen_US
dc.subjectBandgap analysisen_US
dc.subjectLight emitting deviceen_US
dc.subjectNanophosphorsen_US
dc.titleDiffuse reflectance properties and bandgap analysis of Mg2SiO4:RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device applicationen_US
dc.typeArticleen_US
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