Please use this identifier to cite or link to this item: http://13.232.72.61:8080/jspui/handle/123456789/588
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dc.contributor.authorIniewski, Krzysztof-
dc.date.accessioned2018-12-09T03:55:33Z-
dc.date.available2018-12-09T03:55:33Z-
dc.date.issued2011-
dc.identifier.citationIniewski, Krzysztof. (2011). Radiation effects in semiconductors. Retrieved from http://www.crcpress.com.en_US
dc.identifier.isbn978-1-4398-2694-2-
dc.identifier.urihttps://books.google.co.in/books?id=zO6C4fcY7WIC&pg=PR4&lpg=PR4&dq=978-1-4398-2694-2&source=bl&ots=fjLAcMAuMs&sig=p7e0j1KLjrmi0810tdD5PPEmlkk&hl=en&sa=X&ved=2ahUKEwjuy7it7JHfAhUF3o8KHYhFDCcQ6AEwAXoECAoQAQ#v=onepage&q=978-1-4398-2694-2&f=false-
dc.identifier.urihttp://13.232.72.61:8080/jspui/handle/123456789/588-
dc.descriptionUSE ONLY FOR ACADEMY PURPOSE.en_US
dc.description.abstractThe operations of silicon detectors are progressively degraded by radiation, ultimately leading to their failure. The radiation damage mechanism in the sensors can be divided in two classes: surface and bulk damage.en_US
dc.language.isoenen_US
dc.publisherCRC Press, Taylor & Francis Group.en_US
dc.subjectAeronauticalen_US
dc.subjectAutomatic controlen_US
dc.subjectDevices.en_US
dc.titleRadiation Effects in Semiconductors.en_US
dc.typeBooken_US
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